Uniformity Improvement Techniques for IGZO Thin Film Transistors

Yibo Zhu

doi:10.62051/p6wzc795

Authors

Yibo Zhu

DOI:

https://doi.org/10.62051/p6wzc795

Keywords:

IGZO; TFTs; Uniformity.

Abstract

This study focuses on key technical strategies for enhancing the uniformity of indium gallium zinc oxide (IGZO) thin-film transistors (TFTs), a critical factor for their industrial scalability. A comprehensive comparison is made between conventional vacuum-based deposition methods, such as sputtering, atomic layer deposition (ALD), chemical vapor deposition (CVD), and emerging solution-based technologies, including spin coating, inkjet printing, and spray pyrolysis. The analysis identified precursor formulations, deposition parameters, interface engineering, and post-treatment methods, such as laser or plasma annealing, that play decisive roles in improving microstructural quality and electrical uniformity. This paper compared the effects of vacuum deposition and solution techniques on IGZO thin-film transistors, found that material composition, deposition conditions, and post-treatment processes are the keys to improving device uniformity.

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References

[1] Feng J, Jeon S H, Park J, et al. Improvement in Switching Characteristics and Bias Stability of Solution-Processed Zinc–Tin Oxide Thin Film Transistors via Simple Low-Pressure Thermal Annealing Treatment. Nanomaterials, 2023, 13(11): 1722.

[2] Magnarin L, Breitung B, Aghassi‐Hagmann J. A Comprehensive Guide to Fully Inkjet‐Printed IGZO Transistors. Advanced Electronic Materials, 2024: 2400478.

[3] Pan Z, Hu Y, Chen J, et al. Approaches to improve mobility and stability of IGZO TFTs: a brief review. Transactions on Electrical and Electronic Materials, 2024, 25(4): 371-379.

[4] Haneef H F, Zeidell A M, Jurchescu O D. Charge carrier traps in organic semiconductors: a review on the underlying physics and impact on electronic devices. Journal of Materials Chemistry C, 2020, 8(3): 759-787.

[5] Shangguan Q, Lv Y, Jiang C. A Review of Wide Bandgap Semiconductors: Insights into SiC, IGZO, and Their Defect Characteristics. Nanomaterials, 2024, 14(20): 1679.

[6] Niu J, Qi L, Lian H, et al. Revisiting the inhomogeneity in drop-on-demand printing of graphene: An effective route for overcoming the coffee-ring effect[J]. Surfaces and Interfaces, 2024, 46: 104036.

[7] Kim D L, Jeong W H, Kim H J. Approaches to decreasing the processing temperature for a solution-processed InZnO thin-film transistors. Japanese journal of applied physics, 2013, 52(3S): 03BB06.

[8] Kim H G, Lee H J, Lee K M, et al. Improved mobility and bias stability of Hf-doped IGZO thin-film transistor. Journal of Alloys and Compounds, 2024, 981(5): 173587.

[9] Bao B, Karnaushenko D D, Xu J, et al. Flexible IGZO TFT Technology for Shift Register Drivers. Advanced Electronic Materials, 2024, 10(10): 2400036.

[10] Song J, Huang X, Han C, et al. Recent developments of flexible InGaZnO thin‐film transistors. physica status solidi (a), 2021, 218(7): 2000527.

[11] Liu Y, Yu Y, Li T, et al. High Performance and High Yield Solution Processed IGZO Thin Film Transistors Fabricated with Low‐Temperature Annealed Hafnium Dioxide Gate Dielectric. Advanced Electronic Materials, 2023, 9(11): 2300415.